In the rapid development of modern electronic technology, the performance and technical level of electronic devices have become one of the key factors that determine success or failure. Gallium nitride (GaN) power amplifiers, with their excellent performance and broad application prospects, have stood out in many application fields such as communications, electronic countermeasures, and instruments and meters, becoming a hot spot in scientific research and application. Their significant advantages of high power output, wide bandwidth coverage, high gain, and high-frequency support capabilities play a crucial core role in electronic devices.

Recently, SDSX launched the broadband power amplifier SX1958, which is a GaN monolithic integrated power amplifier chip with a working frequency range of 6–18 GHz.

• Power gain: 20 dB
• Pout: 43.8 dBm
• Power added efficiency: 30%

• Power gain: 23.5 dB
• Pout: 44.5 dBm
• Power added efficiency: 31%

Pout vs. Frequency vs. VD@Pin=24dBm

Power Gain vs. Frequency vs. VD@Pin=24dBm

Power Added Efficiency vs. Frequency vs. VD@Pin=24dBm